Quantum Materials and Spintronics: Designing Next-Generation Magnetic Devices for Energy-Efficient Data Storage

Abstract

Quantum materials have emerged as promising candidates for advancing spintronic devices, offering pathways toward energy-efficient, high-speed data storage. This study investigated the structural, electrical, magnetic, and thermal properties of quantum materials, including WTe₂, Bi₂Se₃, and MoS₂, and evaluated their performance in spintronic heterostructures. Experimental analyses using magneto-transport measurements, X-ray photoelectron spectroscopy, and atomic force microscopy were complemented by theoretical simulations based on density functional theory and Monte Carlo methods to model spin–orbit torque, spin Hall effects, and thermal stability. The results demonstrated that WTe₂ exhibited the highest spin Hall angle, lowest resistivity, and superior spin–charge conversion efficiency, while Bi₂Se₃ showed balanced performance with moderate energy dissipation and high interface stability. MoS₂, although structurally robust, displayed comparatively lower spin transport efficiency. Devices incorporating WTe₂ and Bi₂Se₃ achieved ultralow switching energies, high SOT efficiency, and enhanced thermal robustness, indicating their potential for low-power, high-density memory applications. The study further highlighted the importance of interface engineering, topological surface states, and two-dimensional magnetism in optimizing spintronic performance. These findings suggest that the integration of quantum materials into spintronic architectures can significantly reduce energy consumption and improve reliability, paving the way for next-generation magnetic storage technologies. Future work should focus on scalable fabrication, multilayer heterostructures, and AI-guided material optimization to fully exploit the potential of quantum-material-based spintronic devices.